the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for in accuracies or ommisions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2005 s irenza microdevices, inc. all worldwide rights reserved. 303 s. technology court, phone: (800) smi-mmic http://ww w.sirenza.com broomfield, co 80021 1 eds-104211rev d sirenza microdevices? SDM-09060-B1F 65w power module is a robust impedance matched, single-stage, pu sh-pull class ab amplifier mod- ule suitable for use as a power amplifier driver or output stage. the power transistors are fabricated us ing sirenza's latest, high perfor- mance ldmos process. it is a drop- in, no-tune solution for high power applications requiring high efficiency, excellent linearity, and unit-to- unit repeatability. it is internally matched to 50 ohms. key specifications symbol parameter units min. typ. max. frequency frequency of operation mhz 925 - 960 p 1db output power at 1db compression, 943 mhz w 60 65 - gain gain at 60w pep, 942mhz and 943mhz db 16 17 - gain flatness peak-to-peak gain variation, 60w pep, 925 - 960mhz db - 0.3 0.5 efficiency drain efficiency at 60w pep, 942mhz and 943mhz % 32 34 - efficiency drain efficienc y at 60w cw, 942mhz % 44 - irl input return loss 60w pep output power, 925 - 960mhz db - -15 -12 imd 3rd order imd product, 60w pep, 942mhz and 943mhz dbc - -31 -27 delay signal delay from pin 3 to pin 8 ns - 4.0 - phase linearity deviation from li near phase (peak-to-peak) deg - 0.5 - r th thermal resistance (junction to case) oc/w 1.5 functional block diagram SDM-09060-B1F 925-960 mhz class ab 65w power amplifier module product features applications ? available in rohs compliant packaging ? 50 w rf impedance ? 65w output p 1db ? single supply operation : nominally 28v ? high gain: 17 db at 942 mhz ? high efficiency : 44% at 942 mhz ? esd protection: jedec class 2 (2000v hbm) ? base station pa driver ? repeater ? cdma ? gsm / edge product description test conditions z in = z out = 50 ? , v dd = 28.0v, i dq1 = i dq2 =300ma t flange = 25oc t quality specifications parameter description unit typical esd rating human body model volts 2000 mttf 200 o c channel hours 1.2 x 10 6 +28v dc +3v dc to +6 v dc +28v dc +3v dc to +6 v dc 2 vds vds 1 out rf rf in gnd gnd gnd gnd vgs 2 1 vgs o o o o 0 180 0 180 balun balun case flange = ground pb rohs compliant & green package SDM-09060-B1Fy
303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 2 eds-104211 rev d SDM-09060-B1F 925-960 mhz 65w power amp module pin description pin # function description 1v gs1 ldmos fet q1 gate bias. v gsth 3.0 to 5.0 vdc. see notes 2, 3 and 4 2,4,7,9 ground module topside ground. 3 rf input module rf input. this pin is internally connected to dc ground. do not apply dc voltages to the rf leads. care must be taken to protect against video transients that may damage the active devices. 5v gs2 ldmos fet q2 gate bias. v gsth 3.0 to 5.0 vdc. see notes 2, 3 and 4 6v d2 ldmos fet q2 drain bias. see note 1. 8 rf output module rf output. this pin is internally connected to dc ground. do not apply dc voltages to the rf leads. care must be taken to protect against video transients that may damage the active devices. 10 v d1 ldmos fet q1 drain bias. see note 1. flange ground baseplate provides electrical ground and a thermal transfer path for the device. proper mounting assures optimal performance and the highest reliability. see sirenza applications note an-054 de tailed installation instructions for power modules. caution: esd sensitive appropriate precaution in handling, packaging and testing devices must be observed. note 1: internal rf decoupling is incl uded on all bias leads. no addi- tional bypass elements are required, however some applica- tions may require energy storage on the v d leads to accommodate modulated signals. note 2: gate voltage must be applied to v gs leads simultaneously with or after application of drain voltage to prevent potentially destructive oscillati ons. bias voltages should never be applied to a module unless it is properly terminated on both input and output. note 3: the required v gs corresponding to a specific i dq will vary from module to module and may differ between v gs1 and v gs2 on the same module by as much as 0.10 volts due to the normal die-to-die variation in threshol d voltage for ldmos transistors. note 4: the threshold voltage (v gsth ) of ldmos transistors varies with device temperature. external temperature compensation may be required. see sirenza appl ication notes an-067 ldmos bias temperature compensation. note 5: this module was designed to have it's leads hand soldered to an adjacent pcb. the maximum soldering iron tip temperature should not exceed 700 c, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. refer to app note an054 (www.sirenza.com) for further installation instructions. absolute maximum ratings parameters value unit drain voltage (v dd )35v rf input power +37 dbm load impedance for continuous operation without damage 5:1 vswr control (gate) voltage, vdd = 0 vdc 15 v output device channel temperature +200 oc operating temperature range -20 to +90 oc storage temperature range -40 to +100 oc operation of this device beyond any one of these limits may cause per- manent damage. for reliable continuous operation see typical setup val- ues specified in the table on page one. 10 9 8 7 6 5 4 3 2 1 case flange = ground q2 q1 simplified device schematic
303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 3 eds-104211 rev d SDM-09060-B1F 925-960 mhz 65w power amp module typical performance curves 2 tone gain, efficiency, linearity vs pout vdd=28v, idq=0.6a, freq=942 mhz, delta f=1 mhz 0 5 10 15 20 25 30 35 40 45 0 20406080100 pout (w pep) gain (db), efficiency (%) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 imd (dbc) gain efficiency im3 im5 im7 cw gain, efficiency, irl vs frequency vdd=28v, idq=0.6a, pout=60w 0 10 20 30 40 50 900 920 940 960 980 frequency (mhz) gain (db), efficiency (%) -25 -20 -15 -10 -5 0 input return loss (db) gain efficiency irl cw gain, efficiency vs pout vdd=28v, idq=0.6a, freq=942 mhz 8 9 10 11 12 13 14 15 16 17 18 19 20 020406080100 pout (w) gain (db) 0 5 10 15 20 25 30 35 40 45 50 55 60 efficiency (%) gain efficiency 2 tone gain, efficiency, linearity and irl vs frequency vdd=28v, idq=0.6a, pout=60w pep, delta f=1 mhz 0 10 20 30 40 50 60 70 900 920 940 960 980 frequency (mhz) gain (db), efficiency (%) -70 -60 -50 -40 -30 -20 -10 0 imd(dbc), irl (db) gain efficiency im3 im5 im7 irl
303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 4 eds-104211 rev d SDM-09060-B1F 925-960 mhz 65w power amp module typical performance curves (cont?d) im3 vs pout for various idq vds=28v, freq=942 mhz, delta f=1 mhz -60 -55 -50 -45 -40 -35 -30 -25 0 1020304050607080 pout (w pep) gain (db) idq=0.4a idq= 0.7a idq=0.5a idq=0.6a idq=0.8a cw gain vs pout for various idq vds=28v, freq=942 mhz 18 18.5 19 19.5 20 0 1020304050607080 pout (w) gain (db) idq=0.4a idq=0.7a idq=0.5a idq=0.6a id q =0.8a two tone gain, efficiency, irl, imd vs supply voltage pout=60w pep, idq=0.6a, freq= 942 mhz, delta f=1 mhz 0 10 20 30 40 50 60 18 20 22 24 26 28 30 32 vds (volts) gain (db), efficiency (%) -60 -50 -40 -30 -20 -10 0 input return loss (db), imd (dbc) . gain efficiency irl im3 im5 im7 cw gain, efficiency, irl vs supply voltage pout=60w, idq=0.6a, freq=942 mhz 0 10 20 30 40 50 60 18 20 22 24 26 28 30 32 vds (volts) gain (db), efficiency (%) -30 -25 -20 -15 -10 -5 0 input return loss (db ) gain efficiency irl note: evaluation test fixture information available on sirenza website, referred to as sdm-eval.
303 s. technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 5 eds-104211 rev d SDM-09060-B1F 925-960 mhz 65w power amp module package outline drawing note: refer to application note an054, ?detailed installation instru ctions for power modules? for detailed mounting information.
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